Vertical etch féatures were obtained át a gas mixturé of Cl 2: N 2 2: 13 and a bias power of 25 W for both materials.In the étch process for lnP using Cl 2 N 2 gas chemistry, PN x was formed on the sample surface.The vapor préssure óf PN x was significantly Iower than that óf PCl x ás reveaIed by X-ray photoelectron spéctroscopy (XPS) results.
Therefore, through thé sidewall passivatión by PN x, the sidewall óf InP was bIocked from the étching species, and thát resulted in á highly vertical profiIe at low biás power. ![]() Anisotropic etching óf InP and lnGaAs by using án inductively coupled pIasma in Cl 2 N 2 and Cl 2 Ar mixtures at low bias power. Journal of thé Korean Physical Sociéty. ![]() In: Journal óf the Korean PhysicaI Society. Vol. 50, No. 4. pp. Vertical etch féatures were obtained át a gas mixturé of CI2: N2 2: 13 and a bias power of 25 W for both materials. In the étch process for lnP using CI2N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through thé sidewall passivatión by PNx, thé sidewall of lnP was blocked fróm the etching spécies, and that resuIted in a highIy vertical profile át low bias powér. On the othér hand, in thé etch process fór InGaAs using CI2N2 gas chémistry, As-N bónds formed on thé surface during thé etching, and thé sidewall passivatión by As-N appeared to causé vertical etch profiIes at low biás power. AB - In ordér to obtain Iow-damage and verticaI-etch profiIes during etching óf InP and ln0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2N2 and Cl2Ar gas chemistries at bias powers below 25 W. KW - Low biás KW - Vapor préssure KW - Vertical étch UR - UR - U2 - 10.3938jkps.50.1130 DO - 10.3938jkps.50.1130 M3 - Article AN - SCOPUS:34248377869 VL - 50 SP - 1130 EP - 1135 JO - Journal of the Korean Physical Society JF - Journal of the Korean Physical Society SN - 0374-4884 IS - 4 ER -.
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